Warood Kream Alewee Alaarage

In this work, a solar and flash center was created by combining two organic dyes, erythrosine and rhodamine, with completely different concentrations. Throughout the spectra of fluorescence (F) and absorbance (A), the quantitative efficiency of the dye mixture was determined. It was manufactured from a panel of epoxy containing a mixture of the two dyes using open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF), and solar cell efficiency (η). It was found that a 1 mm thickness of the panel works best in increasing the efficiency of the photovoltaic cell.

In our work, a P-type porous silicon (PSi) with orientation (100) have been prepared using the chemical etching method; the goal is to study the electrical properties of PSi samples prepared with completely different etching current (7, 9, 11 and 13) mA and glued for (15 min) anodization time. Depending on the atomic force microscopy (AFM) investigation, we notice the roughness of Si surface increases with increasing etching current because of increases within the dimension (diameter) of surface pits. The electrical and optoelectronic properties of prepared PSi, specifically capacitance-voltage (C-V), current-voltage (I-V), responsivity and detectivity, are analyzed. It had been found that electrical characteristics of porous Si samples measured in dark (Id) and below illumination (IPh) will be fitted well by the equations of thermal emission. From this point of view, Schottky barrier height (ɸB) and ideality factor (n) of made-up photodetectors were calculated. We tended to determine from I-V characteristics of a dark, and illuminations that the pass current through the PSi layer reduced by increasing the etching current, as a result of increasing the electrical resistance of PSi layer and therefore the optimum value of ideality factor is (2.7), whereas from C-V characteristic we determined that in-built potential accumulated with increasing etching current. The results show that there are clear results for better performance of photodetectors.

The nanostructure silicon known as Porous Silicon (PSi) was prepared by the technique of electrochemical etching of crystalline silicon doped boron (p-type) with orientation (100) by using Teflon cell, HF with 40% concentration and Methanol with purity (99.9%) in (1:2) ratio at 9 mA/cm2 current density and 13 min etching time. Ag nanoparticles was prepared by chemical reduction method. The structural, optical and electrical properties was investigated by using X-Ray Diffraction (XRD) Scanning Electron Microscope (SEM) Fourier Transform Infrared Spectroscopy (FTIR) and UV-visible spectrum. The electrical properties of Ag/PSi/c-Si/Al junction was studied by using dark I-V, illuminated I-V, C-V measurement and responsivity. The current study showed improvement in the electrical properties PSi photodetector after embedding AgNPs.

Computer simulation of optical scanning holography (OSH) have been developed by (MATLAB-2009). Recording the hologram of an image of type (JPG) was obtained by taking the fast Fourier transform, fft2, of the original image in the gray scale. Two parts of the recorded hologram were obtained, the real part, called the sine Fresnel zone plate hologram and the imaginary part, called the cosine Fresnel zone plate hologram. The reconstructed images of the sine and cosine parts are obtained by using the inverse Fourier transform, ifft2. The result is the real image reconstruction of complex Fresnel zone plate hologram, Hc+, and the reconstruction of complex Fresnel zone plate hologram, Hc-.

In this study first-principles calculations based on density functional theory (DFT) were performed to study the nature of the electronic and optical characteristics of the gases CO2, CO, H2S, SO, and SO2 adsorption on indium phosphate InP bilayer surface. Four initial adsorption sites were chosen to investigate the more effective and sensitive adsorption location for the adsorbed gases. Our findings indicate that the adsorption of CO2 gas exhibits a physical nature, in contrast to the chemical nature gases. Delocalized electrons are observed in the interlayer region in the ELF of CO2 on the InP bilayer. This result suggests the absence of a chemical bond between the CO2 gas molecule and the InP bilayer. According to an analysis, a gas molecule’s adsorption might be influenced by InP bilayer’s optical properties. Overall, the calculations demonstrate an excellent potential of InP bilayer to act as a gas sensor for studies gases.