وسناء محمد عبد الرضا البغدادي

Silver nanoparticles have been used extensively in a range of medical setting due to antibacterial properties, Despite the wide used of silver Nps products ,relativity few undertaken to determine the biological effect of nanosilver exposure, the present study objective to investigate the effect of nanosilver on brain and liver, in vivo via intravenous injection of silver Nps dose 0.5 ml into rats. Ten female rats aged (9) weeks and weight (180- 195) gm were divided equally into (2) groups n=5 , group I: rats served as control ,group II: rats serve as experimental ,after one month the rats were scarified for hitopathological samples ,the result were serve pathological lesion in brain and liver.

Abstract—In this study , (Fe3O4) thin film which prepared by chemical method and deposited by drop casting technique on glass. The structural ,optical and chemical analysis have been investigated . X-ray diffraction (XRD) measurements relieve that the (Fe3O4) thin film was single crystalline, cubic structure and there is no trace of the other material. UV-Vis measurements reveal that the energy gap of (Fe3O4) thin film was found 2.2 eV. The Fourier Transform Infrared Spectroscopy (FTIR) spectrum of (Fe3O4) thin film shows the O–H in plane and out of plane bonds appears at (1583.45 – 1481.23 and 935.41–838.98)cm-1 and absorption band Fe–O bonds in the crystalline lattice of Fe3O4 .

In this study, porous silicon photodetectors incorporated with multiwalled carbon nanotubes MWCNTs were investigated. Anodization technique was used to fabricate porous silicon photodetectors at 16 mA/cm2 for 15 min. The characteristics of porous silicon and MWCNTs were investigated by using x-ray diffraction XRD, atomic force microscopy AFM, Fourier transformation infrared spectroscopy FT-IR, photoluminescence PL, and scanning electron microscopy SEM, Dark and illuminated current-voltage I-V characteristics,capacitance-voltage characteristics C-V, spectral responsivity, specific detectivity, and minority carrier life time MCLT of photodetectors were investigated before and after incorporation. Significant improvement was noticed in photosensitivity and detectivity of the porous silicon photodetector after incorporating the MWCNTs into the porous matrix.

In this study, Al/SnS/PS/n-Si/Al photodiode was fabricated and investigated. SnS thin film were prepared by thermal evaporation technique on porous silicon layer which prepared by anodization technique at 32mA/cm2 etching current density and etching time 15min.The characteristics of porous silicon and SnS were investigated by using x-ray diffraction XRD, atomic force microscopy AFM, Fourier transformation infrared spectroscopy FT-IR. Dark and illuminated current-voltage I-V characteristics, spectral responsivity, specific detectivity of photodiode were investigated after depositing. Significant improvement in photosensitivity and detectivity of porous silicon photodiode after SnS deposition on porous silicon was noticed.

CdO thin film synthesis by electrochemical deposition method at 15 min deposition time was investigated in this paper. The result of the optical transmittance of CdO thin film which formed at room temperature was 20% at wavelength ≈ 350 nm then increases to 60% at wavelength ≈1100 nm for thin film of CdO. The band-gap was also calculated from the equation relating absorption coefficient with the wavelength. The energy band gap changes from 2.3eV (Bulk CdO) to 2.45eV (CdO thin film). The plotted graphs show the optical characteristics of the film which varied with the wavelength and the photon energy. The optical conductance and band-gap indicated that the film is transmitting within the visible range. The dielectric constant and optical conductance of the film initially decreases slowly with increase in photon energy. The extinction coefficient and refractive index of the films also evaluated, which affected with the change in transmittance. The structure of synthesized CdO thin film was analyzed by X-ray diffraction XRD which revealed that the CdO thin film are polycrystalline and have several peaks of cubic face structure. The crystallite size, dislocation density, microstrain and number of dislocations of the thin film were calculated and listed.

In this paper, porous silicon layers was prepared from p-type silicon with orientation (100) by electrochemical etching method , samples were anodized in a solution of 48% HF and 99% C2H2OH at 1:1 ratio and study the morphology properties of PSi samples by changing etching time (15, 17 and 20) min for fixed (11.5 mA/ cm2) current density, and imaged PSi sample in Atomic force microscopy(AFM), which shows the rough silicon surface, with increasing etching process (etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits. Consequently, the surface roughness also increases and we found that the porosity of PSi increasing with the increasing etching time. The XRD measurements has confirmed the crystallinity nature of porous silicon. A broad peak of blue emission has also confirmed by photoluminescence (PL) measurements and it has been attributed to SiHx groups which are confirmed by FTIR spectra. Chemical fictionalization during the electrochemical etching show on surface chemical composition of PSi. From the FTIR analyses showed that the Si dangling bonds of the as-prepared PSi layers have large amount of Hydrogen to form weak Si–H bonds.

تم اقامة ورشة عمل عن استراتيجية الاصلاح الاداري بحضور السيد المساعد العلمي أ.د محسن العبادي ومسؤولي شعب الاحصاء في كليات الجامعة وتم التطرق الى كيفية اعداد خطة قصيرة المدى ولمدة سنة واحدة تتبعها الكلية في تحديد استراتيجيتها الادراية واخلصت الورشة الى عدة توصيات منها تشكيل لجنة لوضع الخطة تسمى لجنة التنفيذ واخرى لمتابعة تنفيذ الخطة تسمى لجنة المتابعة.