Impact of changing anodization current density on structural and
morphological properties of PSi layer
الباحث الأول:
Wasna'a M. Abdulridha,
الباحثين الآخرين:
Raheem G. Kadhim, Raid A. Ismail
المجلة:
International Letters of Chemistry, Physics and Astronomy
تاريخ النشر:
None
مختصر البحث:
In this paper, porous silicon layer prepared by electrochemical etching process of (100) p-type
silicon wafer at different current densities (9, 11, 14 and 16)mA/cm² for 15min etching time. The
structural and morphological properties were characte…
In this paper, porous silicon layer prepared by electrochemical etching process of (100) p-type
silicon wafer at different current densities (9, 11, 14 and 16)mA/cm² for 15min etching time. The
structural and morphological properties were characterized by X-ray diffraction (XRD), scanning
electron microscopy (SEM),energy dispersive X-ray (EDX), atomic force microscopy (AFM),
fourier transformation infrared spectroscopy (FTIR) and photoluminescence (PL). XRD
investigation exhibited that all the layers were monocrystalline structure with preferred orientation
(211). AFM investigation indicates that PSi layer sponge like structure, and average diameter of
pore increased with increasing current density, our result showed a PSi structure with porosity of
(34.19-75.36%). From FTIR analysis, it has been show that the Si dangling bonds of the prepared
PSi layer have large amount of Hydrogen to form (Si-H) bond. Increasing the current density from
(9-16mA/cm²)leads to shift the photoluminescence peak position from (1.63-1.66eV).
