Ukufa

Effect of Temperature on some Rheological and Optical properties of Natural Rubber

الباحث الأول: Saleh H. Abud

المجلة: JURNAL OF COLLEGE OF EDUCATION

تاريخ النشر: None

مختصر البحث:

In this work, some rheological and optical properties of natural rubber solutions in toluene with different concentrations have been studied at a range of temperature (20-50)0C. The results show that increase of density , viscosity , refractive ind…

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Investigation of structural and optical properties of GaN on flat and porous silicon

الباحث الأول: Saleh H. Abud

الباحثين الآخرين: ,Abbas M. Selman Z. Hassan

المجلة: Superlattices and Microstructures

تاريخ النشر: None

مختصر البحث:

In this work, gallium nitride (GaN) layers were successfully grown on Flat-Si and porous silicon (PSi) using a radio frequency-magnetron sputtering system. Field emission scanning electron microscopy and atomic force microscopy images showed that …

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Physical properties of porous In0.08Ga0.92N

الباحث الأول: Saleh H. Abud

الباحثين الآخرين: Z Hassan, FK Yam

المجلة: International Journal of Nanoelectronics and Materials

تاريخ النشر: None

مختصر البحث:

In this study, nanoporous structures on In0.08Ga0.92N/AlN/Si thin films with a thickness of 1 μm were synthesized by photoelectrochemical etching technique at various etching durations. The structural and optical properties of the pre- and post-etch…

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Novel InGaN mesoporous grown by PA-MBE

الباحث الأول: Asmiet Ramizy

الباحثين الآخرين: Saleh H. Abud, A.S. Hussein, Z. Hassan, F.K. Yam, C.W. Chin

المجلة: Materials Science in Semiconductor Processing

تاريخ النشر: None

مختصر البحث:

This study involves the synthesis of Porous InxGa1−xN/GaN/AlN on Si (111) subatrate using an electrochemical etching technique based on plasma-assisted molecular beam epitaxy.The structural and optical properties of the as-grown and porous films wer…

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Properties of Pt Schottky contact on porous In0.27Ga0.73N thin film revealed from I -V measurements

الباحث الأول: Saleh H. Abud

الباحثين الآخرين: HASSAN, Z.; YAM, F. K.; AHMAD, M. A

المجلة: Advanced Materials Research;2014, Issue 895, p558

تاريخ النشر: None

مختصر البحث:

The electrical properties of a Pt Schottky contact on porous In0.27Ga0.73N/GaN/AlN/Si(111) thin film that was grown via the plasma-assisted molecular beam epitaxy technique were reported. Porous film nanostructure was synthesized using the electroch…

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Comparison of the structural and optical properties of porous In 0.08 Ga 0.92 N thin films synthesized by electrochemical etching

الباحث الأول: Saleh H. Abud

الباحثين الآخرين: Z Hassan, FK Yam, AJ Ghazai

المجلة: Journal of Solid State Chemistry

تاريخ النشر: None

مختصر البحث:

This paper presents the structural and optical study of porous (1 µm) In0.08Ga0.92N synthesized by photoelectrochemical etching under various conditions. Field emission scanning electron microscope and atomic force microscope images showed that the …

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Fabrication and characterization of metal–semiconductor–metal photodetector based on porous InGaN

الباحث الأول: Saleh H. Abud

الباحثين الآخرين: Z Hassan, FK Yam

المجلة: Materials Chemistry and Physics

تاريخ النشر: None

مختصر البحث:

In this study, the characteristics of metal–semiconductor–metal (MSM) photodetector based on a porous In0.27Ga0.73N thin film were reported. Nanostructured porous film was synthesized using the UV-assisted electrochemical etching technique. The form…

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Characteristics of MSM photodetector fabricated on porous In0.08Ga92N

الباحث الأول: Saleh H. Abud

الباحثين الآخرين: Z Hassan, FK Yam, CW Chin

المجلة: Measurement

تاريخ النشر: None

مختصر البحث:

In this study, nanoporous structures of In0.08Ga0.92N thin films were synthesized using anodic etching at various etching durations. The metal–semiconductor–metal photodetectors subsequentaly have been fabricated by depositing a high work function m…

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The effective role of time in synthesising InN by chemical method at low temperature

الباحث الأول: MA Qaeed

الباحثين الآخرين: K. IbrahimK. M. A. SaronQ. N. AbdullahNezar G. ElfadillSaleh H. AbudKhaled M. Chahrour

المجلة: Journal of Materials Science: Materials in Electronics

تاريخ النشر: None

مختصر البحث:

This study involves the synthesise of indium nitride (InN) nanoparticles at low temperature using a chemical method. Three samples were synthesised under different times to produce InN nanoparticle of high quality crystallinity. Results showed that …

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Structural and Optical Properties of In0.27Ga0.73N/Si (111) Film Grown Using PA-MBE Technique

الباحث الأول: Saleh H. Abud

الباحثين الآخرين: Hassan Zainuriah, Fong Kwong Yam, Alaa J. Ghazai

المجلة: Advanced Materials Research

تاريخ النشر: None

مختصر البحث:

In this paper, InGaN/GaN/AlN/Si (111) structure was grown using a plasma-assisted molecular beam epitaxy (PA-MBE) technique. The structural and optical properties of grown film have been characterized using scanning electron microscopy (SEM), atomic…

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Metal-Semiconductor-Metal Photodetector Based On Porous In0.08Ga0.92N

الباحث الأول: Saleh H. Abud

الباحثين الآخرين: Z Hassan, FK Yam

المجلة: International Journal of Chemical, Molecular, Nuclear, Materials and Metallurgical Engineering

تاريخ النشر: None

مختصر البحث:

Characteristics of MSM photodetector based on a porous In0.08Ga0.92N thin film were reported. Nanoporous structures of n-type In0.08Ga0.92N/AlN/Si thin films were synthesized by photoelectrochemical (PEC) etching at a ratio of 1:4 of HF:C2H5OH s…

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A comparative study of the structural and electrical properties of n-type InGaN epilayer grown by MBE and commercially

الباحث الأول: Saleh H. Abud

الباحثين الآخرين: Asmiet Ramiy, A.S. Hussein, Z. Hassan, F.K. Yam

المجلة: Superlattices and Microstructures

تاريخ النشر: None

مختصر البحث:

This work reports the growth of n-In0.27Ga0.73N/GaN/AlN epitaxial layer on Si(1 1 1) substrate by using plasma-assisted molecular beam epitaxy (MBE) and commercially obtained n-In0.08Ga0.92N/AlN. As-grown and commercial thin films were characterized…

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Structural properties of porous In0.08Ga92N synthesized using photoelectrochemical etching

الباحث الأول: Saleh H, Abud

الباحثين الآخرين: Z Hassan, FK Yam

المجلة: Materials Letters

تاريخ النشر: None

مختصر البحث:

This paper presents the morphology and structural studies of as-grown and porous In0.08Ga0.92N/AlN/Si thin films prepared by UV-assisted electrochemical etching under various etching durations. The morphology and structural properties of the as-grow…

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Enhancement of structural and optical properties of porous In0. 27Ga0. 73N thin film synthesized using electrochemical etching technique

الباحث الأول: Saleh H. abud

الباحثين الآخرين: Z Hassan, F Yam

المجلة: International Journal of Electrochemical Science

تاريخ النشر: None

مختصر البحث:

This paper presents the growth conditions of In0.27Ga0.73N/Si(111) thin film with thickness of 110 nm prepared using plasma-assisted molecular beam epitaxy technique. Indium mole fraction of 0.27 was calculated using X-ray diffraction and Vegard’s…

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Effects of gamma ray on some electrical and optical properties of synthetic rubber

الباحث الأول: محمد حمزة المعموري

الباحثين الآخرين: صالح حسون عبود, فارس عبد ياسين

المجلة: مجلة جامعة القادسية

تاريخ النشر: None

مختصر البحث:

In this work ,some electrical properties ( such as electrical conductivity ) and optical properties(such as refractive index ) of synthetic rubber solution in toluene with concentration ) ml gm (0.5 were measured at 30 co after irradiation the …

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Study of Some Physical Properties of Polyisoprene - NR

الباحث الأول: Saleh H. Abud

المجلة: AL-Kufa Journal

تاريخ النشر: None

مختصر البحث:

In this work . The density , viscosity , electrical conductivity , molar conductivity , degree of dissociation and spectrum of absorbance were reported for polyisoprene solutions in toluene with different concentrations at 250C . Also , the avera…

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صالح حسون عبود العامري

صالح حسون عبود العامري

الملف الشخصي

الاهتمامات البحثية

البحوث المنشورة

Effect of Temperature on some Rheological and Optical properties of Natural Rubber

Investigation of structural and optical properties of GaN on flat and porous silicon

Physical properties of porous In0.08Ga0.92N

Novel InGaN mesoporous grown by PA-MBE

Properties of Pt Schottky contact on porous In0.27Ga0.73N thin film revealed from I -V measurements

Comparison of the structural and optical properties of porous In 0.08 Ga 0.92 N thin films synthesized by electrochemical etching

Fabrication and characterization of metal–semiconductor–metal photodetector based on porous InGaN

Characteristics of MSM photodetector fabricated on porous In0.08Ga92N

The effective role of time in synthesising InN by chemical method at low temperature

Structural and Optical Properties of In0.27Ga0.73N/Si (111) Film Grown Using PA-MBE Technique

Metal-Semiconductor-Metal Photodetector Based On Porous In0.08Ga0.92N

A comparative study of the structural and electrical properties of n-type InGaN epilayer grown by MBE and commercially

Structural properties of porous In0.08Ga92N synthesized using photoelectrochemical etching

Enhancement of structural and optical properties of porous In0. 27Ga0. 73N thin film synthesized using electrochemical etching technique

Effects of gamma ray on some electrical and optical properties of synthetic rubber

Study of Some Physical Properties of Polyisoprene - NR

المحاضرات

Lesson 1File English language

Lesson 1-8 فيزياء احصائية