Bandgap-engineered MXene-g-C3N4 interfacial layer for enhanced charge carrier dynamics in perovskite solar cells
الباحث الأول:
Fadwa Alshaeer
الباحثين الآخرين:
laith kareem Abeas
Mohammed Zorah
المجلة:
Journal of Alloyes and Compounds
تاريخ النشر:
25 ديسمبر، 2024
مختصر البحث:
This research illustrates the crucial significance of bandgap engineering in enhancing the performance of perovskite solar cells (PSCs). By strategically including a graphitic carbon nitride (g-C3N4) and Ti3C2 MXene (MXGCN) heterostructure as an
…
This research illustrates the crucial significance of bandgap engineering in enhancing the performance of perovskite solar cells (PSCs). By strategically including a graphitic carbon nitride (g-C3N4) and Ti3C2 MXene (MXGCN) heterostructure as an
nterfacial layer between the SnO2 electron transport layer and the CH3NH3PbI3
perovskite absorber, we achieved considerable enhancements in device efficiency and stability. The π-conjugated structure of MXGCN promotes effective charge carrier separation and transport, whereas the diminished work function of g-C3N4 improves carrier mobility. The MXGCN heterostructure efficiently passivates defects in the perovskite layer, mitigating non-radiative recombination losses. The synergistic effects led to a significant enhancement in power conversion efficiency (PCE) from 21.20 % to 23.80 %. Furthermore, the devices demonstrated remarkable long-term stability, maintaining over 91 % of their initial efficiency after 700 h of storage. These findings highlight the potential of MXGCN-based interfacial engineering to transform the domain
of perovskite solar cells.
