Benner
وسناء محمد البغدادي ( أستاذ مساعد )
كلية طب الاسنان - طب اسنان عام ( مسؤول شعبة )
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Effect of SnS thin film on the performance of porous silicon photodiode
بحث النوع:
علوم التخصص العام:
Ahmed N. Abd اسم الناشر:
Wasna'a M. Abdulridha Mohammed O. Dawood اسماء المساعدين:
International Letters of Chemistry, Physics and Astronomy الجهة الناشرة:
Online: 2016-01-04 ISSN: 2299-3843, Vol. 63, pp 67-76 doi:10.18052/www.scipress.com/ILCPA.63.67 © 2016 SciPress Ltd., Switzerland  
2016 سنة النشر:

الخلاصة

In this study, Al/SnS/PS/n-Si/Al photodiode was fabricated and investigated. SnS thin film were prepared by thermal evaporation technique on porous silicon layer which prepared by anodization technique at 32mA/cm2 etching current density and etching time 15min.The characteristics of porous silicon and SnS were investigated by using x-ray diffraction XRD, atomic force microscopy AFM, Fourier transformation infrared spectroscopy FT-IR. Dark and illuminated current-voltage I-V characteristics, spectral responsivity, specific detectivity of photodiode were investigated after depositing. Significant improvement in photosensitivity and detectivity of porous silicon photodiode after SnS deposition on porous silicon was noticed.