الخلاصة

In this work, gallium nitride (GaN) layers were successfully grown on Flat-Si and porous silicon (PSi) using a radio frequency-magnetron sputtering system. Field emission scanning electron microscopy and atomic force microscopy images showed that the grown film on Flat-Si had smoother surface, even though there were some cracks on it. Furthermore, the X-ray diffraction measurements showed that the peak intensity of all the grown layers on PSi was higher than that of the grown layer on Flat-Si. Our detailed observation showed that PSi is a promising substrate to obtain GaN films.